Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim - Ezaki, Tatsuya (Hiroshima Univ, Japan) a Mattausch, Hans Jurgen (Hiroshima Univ, Japan) a Miura-mattausch, Mitiko (Hiroshima Univ, Japan)

Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.