SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices - Cressler, John D. (Georgia Institute of Technology, Atlanta, USA)

Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe and Si-C alloys.