Silicon Heterostructure Devices - Cressler, John D. (Georgia Institute of Technology, Atlanta, USA)

Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. This book covers topics including device physics, broadband noise, performance limits, reliability, and engineered substrates.